1990-08-20

Absorption Coefficient of a Semiconductor Thin Film from Photoluminescence G. Rey,* C. Spindler, F. Babbe, W. Rachad, and S. Siebentritt LaboratoryforPhotovoltaics

These devices consist of films with thicknesses of about 1 ,um and it is important to know the refractive index and absorption coefficient as function of wavelength to predict the photoelectric behaviour of a device. _____ Energy μ/ρ μ en /ρ (MeV) (cm 2 /g) (cm 2 /g) _____ 1.00000E-03 1.570E+03 1.567E+03 1.50000E-03 5.355E+02 5.331E+02 1.83890E-03 3.092E+02 3.070E+02 K 1.83890E-03 3.192E+03 3.059E+03 2.00000E-03 2.777E+03 2.669E+03 3.00000E-03 9.784E+02 9.516E+02 4.00000E-03 4.529E Fig. 2. The absorption coefﬁcient of crystalline silicon as a function of wavelength for intrinsic silicon [17], p-type silicon with typical bulk doping concentration and n-type silicon with typical emitter doping concentration [5]. Doping concentration are given in the text.

Absorption coefficient of silicon

We report high precision, high spectral resolution measurements of the absorption coefficient of silicon in the spectral region from 1.61 to 1.65 eV. Our data show a smooth absorption spectrum with no discernable features in this spectral region where structure has been reported previously. absorption properties of silicon-germanium superlattices grown on non-conventional orientation silicon substrates. The goal of this effort was to validate recent theoretical studies with experimental data in the hope of someday extending the photodetection properties of silicon to the near infiared of electromagnetic region. Linear attenuation coefficient was measured experimentally and calculated for both pure silicone, and silicone supported with lead. Two sizes of lead particles have been used 300 µm and 600 µm.The attenuation coefficients have been measured experimentally using slices of thickness (0-5) cm.

These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.

av E Alerstam · Citerat av 22 — and how the scattering coefficient, µs, the absorption coefficient,. µa, and the scattering magnetic fields are the microscopic Maxwell equations [18] (in SI. 7

104, 081915 (2014); 10.1063/1.4866916 Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence 2008-05-12 Absorption coefficient of silicon in cm-1 as a function of the wavelength. Silicon is an indirect bandgap semiconductor so there is a long tail in absorption out to long wavelengths. The data is graphed on a log scale.

1979-09-01 · Fitted absorption coefficient of silicon at T = 20, 77, 300 and 415. Experimental data at T = 77 and 300 are from the NASA absorption curve and those at T = 20 and 415 are taken from Ref.. effects of experimental errors.

Limitations with capacitor discharge generator. Low mAs output and kv falla (författare); Heteroepitaxial Indium Phosphide on Silicon; 2010; Ingår i: grown by MBE on GaN templates for 1.55 mu m intersubband absorption; 2007; Ingår i: Stable Silicon Isotope Analysis on Nanomole Quantities Using MC-ICP-MS with a absorption , alpine site jungfraujoch , coefficient , hygroscopic growth av M Roennbaeck · 2006 — T emperaturmatningama sker med termoelement instuckna fran si dan i badden. Absorption av NH3, HCN, utsug till pase for vat- och kvavgas och lattare kolvaten sion front has passed (char), Y stoichiometric coefficient of element i in 1.1 Grundstorheter och grundenheter i SI systemet.

QDs of varying 12 Nov 2020 Perovskite solar cells are used in silicon-based tandem solar cells due to their tunable band gap, high absorption coefficient and low absorption coefficient was obtained in the range of 0.5 to 2.5 eV using optical transmission measurements and Photothermal Deflection Spectroscopy (PDS).
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absorption and extinction coefficients of silicon at 633 nm. The results are 3105+62 cm-' and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.

Absorption av NH3, HCN, utsug till pase for vat- och kvavgas och lattare kolvaten sion front has passed (char), Y stoichiometric coefficient of element i in 1.1 Grundstorheter och grundenheter i SI systemet.
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The spectral behavior and the temperature dependence of the absorption coefficient of microporous silicon films are studied in the energy range of 1.2–3.8 eV, between 7 and 450 K. For photon energies above the direct band gap at 3.3 eV, the spectral behavior of the absorption coefficient is similar to that of crystalline silicon, and its absolute value is comparable to that estimated using

In [8] the silicon layer was assumed with a refractive index of 3.6 and absorption coefficient of 12.56 cm−1, while in [9] the weak absorber was set with a refractive index of 3.5 and absorption coefficient of 1600 cm−1. A few years ago, a second-order nonlinear optical susceptibility—χ (2) —was reported for a so-called Mach-Zehnder interferometer based on a strained silicon photonic band-gap waveguide.

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Optical absorption coefficient of polycrystalline silicon with very high oxygen content J.M. Serra*, R. Gamboa, A.M. Vall6ra Dep. de Fisica, Univiversidade de Lisboa, Campo Grande, ED-CI, P-1700 Lisboa, Portugal Abstract

A few years ago, a second-order nonlinear optical susceptibility—χ (2) —was reported for a so-called Mach-Zehnder interferometer based on a strained silicon photonic band-gap waveguide.